Friday, August 17, 2012
Sidense wins patent infringement case against Kilopass
The Court finds that there is no genuine dispute of material fact that Sidense's technology does not infringe
The Court provided three separate reasons that Sidense's technology does not infringe any of Kilopass' asserted patents. First, the Court found that Sidense does not have a "row wordline segment coupled to the second doped semiconductor region." The Court found that Kilopass had taken contradictory positions before the Court and the United States Patent Office and, as a result, had disavowed this claim scope. Second, the Court determined that Sidense's accused technology did not have the required "first doped semiconductor region," rejecting Kilopass' argument that a shallow trench isolation in Sidense's design was equivalent to the claimed "doped semiconductor region." Finally, the Court determined that Sidense's design did not have a first and second doped semiconductor region in a "spaced apart relationship" as required by the claims. While any one of these reasons would have been sufficient for Sidense to prevail, the Court's opinion finding three separate reasons that Sidense does not infringe bodes well for Sidense should Kilopass decide to appeal the Court's decision.
Sidense Corp. provides secure, very dense and reliable non-volatile, one-time programmable (OTP) memory IP for use in standard-logic CMOS processes with no additional masks or process steps required. The Company's innovative one-transistor 1T-Fuse™ architecture provides the industry's smallest footprint, most reliable and lowest power Logic Non-Volatile Memory (LNVM) IP solution. With 94 patents granted or pending, Sidense OTP provides a field-programmable alternative solution to Flash, mask ROM and eFuse in many OTP and MTP applications.